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Sputtering Targets

We provide one of the largest, most comprehensive lines of sputtering target materials. All popular geometries (and sizes) including rings, S-Guns and circular, rectangular and triangular and planar targets are available.

Most sputtering target materials can be fabricated into a wide range of shapes and sizes. There are some technical limitations to the maximum size for a given single piece construction. In such cases, a multi-segmented target can be produced with the individual segments joined together by butt or bevelled joints.

Please contact us if your required sputtering target material and/ or purity are not listed.

Sputtering Targets Manufacturing Processes

The specific manufacturing process used depends on the properties of the sputtering target material and the end use of the sputtering target itself. Classical and vacuum hot-pressing, cold-pressing and sintering and vacuum melting and casting are routinely employed in the production of a variety of sputtering sources.

State-of-the-art powder mixing and/or alloying through sintering and/or melting of raw materials and subsequent grinding allow us to meet the highest quality standards. Each production lot of material is sent through various analytical processes, and a certificate of analysis is provided with each shipment.

Grain structure is a key factor in a sputteringtarget’s process performance.  Finer grain sizes reduce variation in film uniformity and deposition rates.  Random, or equiaxed, grain orientation also improves film uniformity.  Properly controlling the grain structure of the target enables higher yielding, more consistent deposition processes.


We use a variety of advanced manufacturing methods to produce sputtertargets with a very fine grain structure and from our broad portfolio of sputteringtarget materials in nearly any shape or size.

Please contact us if your required sputtering target material and/ or purity are not listed.

Sputtering Target Materials

Sputtering Targets are available from a wide variety of compositions in various purity levels, allowing our customers to match targets to their specific requirements.

Sputter deposition has the advantages of reproducibility and simpler process automation - compared to E-Beam or thermal evaporation. Multiple variations in the sputter technique have been developed. Optical films can be deposited from a metal sputtertargets by oxidizing/ nitriding sputtered metal ions to deposit an oxide or nitride film layer of the desired composition.

DC magnetron sputtering is the technique used for metal targets that are electrically conducting. Oxide (insulating) sputtertargets can be sputtered by RF sputtering, but the rate is lower. Practically any material alloy, mixture, pure metal, oxide, nitride, boride, carbide can be supplied as a sputtertarget.

Please contact us if your required sputtering target material and/ or purity are not listed.

Sputtering Target Bonding & Backing Plates

Depending on the particular system and material your sputtering target may require bonding. Backing plates can be fabricated to match virtually any target composition and configuration. We will perform bonding/de-bonding of sputtertargets ordered from us or of sputtering targets and backing plates provided by the customer. We also provide silver-filled epoxy cement containing the optimum ratio of silver powder to epoxy resin for maximum thermal and electrical conductivity and mechanical strength.

Further information on our bonding services can be found here.

Sputtering Process

Sputter deposition (sputtering) is a widely used PVD-technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the sputtering target. The most common method for growing thin films by sputter deposition (sputtering) is the use of a magnetron source in which positive ions present in the plasma of a magnetically enhanced glow discharge bombard the sputtering target or sputtering targets. The sputtering target can be powered in different ways, ranging from dc for conductive sputtering targets (dc-sputtering), to rf (rf sputtering) for non-conductive sputtering targets.

By applying a magnetic field during sputtering (magnetron sputtering) process it is possible to trap the electrons in the discharge longer and produce more ions to bombard the sputtering target for the same electron density. Magnetron sputtering increases the efficiency of the initial ionization process and allows for creating the plasma at lower pressures, reducing both background gas incorporation in the growing film and energy losses in the sputtered atom through gas collisions. Hence magnetron sputtering increases the sputtering rate (deposition rate) dramatically.

 

DC Magnetron Sputtering

A very common and economical way to operate the magnetron is using a dc power supply. Arcs often occur during reactive sputter deposition of, for example, non-conductive oxides from a metal target in pure O2 or mixed Ar/O2 discharges, due to a build up of oxide on the edges of the erosion groove where the sputtering rate is low. Arcing can seriously damage the sputtering target by local melting in the sputtering targets, but it also degrades quality of the deposited film due to the presence of particulates and/or pinholes while eventually destroying the power supply.

An effective way to prevent arcing during reactive magnetron sputtering process is pulsing the applied voltage. An alternative method for solving the arcing problem is the use of two magnetron sources, i.e. dual magnetron sputtering, and switch the negative and positive voltage between the two sputtering targets. In this way, each magnetron alternately has the function of a sputtering target and an anode. Thus, both sputtering targets can be neutralized during each cycle.

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